Electronic Devices
Semiconductors, p-n junction, diodes, transistors, logic gates basics.
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Take a full mock →Q1 · Electronic Devices · EASY
The approximate band gap of silicon at room temperature is:
Q2 · Electronic Devices · EASY
In a p-n junction diode under forward bias condition, the width of the depletion region:
Q3 · Electronic Devices · MEDIUM
A germanium diode has a reverse saturation current of 20 microamperes at room temperature. If the diode is forward biased with 0.3 V at 300 K, the approximate forward current will be: (Take e^5 ≈ 150, kT/e at 300 K = 0.026 V)
Q4 · Electronic Devices · MEDIUM
In a common emitter transistor amplifier circuit, the current gain β is 100. If the base current changes by 20 microamperes, what is the change in collector current?
Q5 · Electronic Devices · HARD
A Zener diode has a breakdown voltage of 6.0 V. It is used in a voltage regulator circuit with a series resistance of 200 ohms connected to a 10 V supply. If the load draws a current of 10 mA, what is the current through the Zener diode? (Assume Zener operates in breakdown region)